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基于二氧化硅襯底的全區域覆蓋單層二硫化鉬

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  • 基于二氧化硅襯底的全區域覆蓋單層二硫化鉬

  • 基于二氧化硅襯底的全區域覆蓋單層二硫化鉬

  • 基于二氧化硅襯底的全區域覆蓋單層二硫化鉬

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更新時間:2024-06-04 13:22:15瀏覽次數:1576

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產品簡介

供貨周期 一周    
This product contains full area coverage MoS2 monolayers on SiO2/Si substrates.

詳細介紹

This product contains full area coverage MoS2 monolayers on SiO2/Si substrates. Sample size measures 1cm in size and the entire sample surface contains monolayer thick MoS2 sheet. Synthesized full area coverage monolayer MoS2 is highly luminescent and Raman spectroscopy studies also confirm the monolayer thickness. In comparison to full area coverage MoS2 on sapphire, full area coverage MoS2 on SiO2/Si display higher PL intensity.

 

 

Sample Properties.

Sample size

1cm x 1cm square shaped

Substrate type

Thermal oxide (SiO2/Si) substrates

Coverage

Full Coverage Monolayer

Electrical properties

1.85 eV Direct Bandgap Semiconductor

Crystal structure

Hexagonal Phase

Unit cell parameters

a = b = 0.313 nm, c = 1.230 nm,

α = β = 90°, γ = 120°

Production method

Atmospheric Pressure Chemical Vapor Deposition (APCVD)

Characterization methods

Raman, photoluminescence, TEM, EDS

Specifications

1)     Full coverage 100% monolayer MoS2 uniformly covered across SiO2/Si substrates.

2)    . One centimeter in size. Larger sizes up to 2-inch wafer-scale available upon requests.

3)     Atomically smooth surface with roughness < 0.2 nm.

4)     Highly uniform surface morphology. MoS2 monolayers uniformly cover across the SiO2/Si substrates.

5)    99.9995% purity as determined by nano-SIMS measurements

6)     Repeatable Raman and photoluminescence response

7)     High crystalline quality, Raman response, and photoluminescence emission comparable to single crystalline monolayer flakes.

8)     SiO2/Si substrates. But our research and development team can transfer MoS2 monolayers onto variety of substrates including PET and quartz without significant compromisation of material quality.

9)     MoS2 monolayers do not contain intentional dopants or defects. However, our technical staff can produce defected MoS2 using α-bombardment technique.

 

Supporting datasets [for 100% Full area coverage on SiO2/Si]

 

 

Transmission electron images (TEM) acquired from CVD grown full area coverage MoS2 monolayers on SiO2/Si confirming highly crystalline nature of monolayers

 

Energy dispersive X-ray spectroscopy (EDX) characterization on CVD grown full area coverage MoS2 on SiO2/Si confirming Mo:S 1:2 ratios

 

Room temperature photoluminescence spectroscopy (PL) and Raman spectroscopy (Raman) measurements performed on CVD grown full area coverage MoS2 monolayers on SiO2/Si. Raman spectroscopy measurement confirm monolayer nature of the CVD grown samples and PL spectrum display sharp and bright PL peak located at 1.85 eV in agreement with the literature.

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