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詳細摘要： 形狀：可任意裁剪尺寸：1*1cm/2*2cm/5*5cm/10*10cm層數：單層晶粒：單晶/多晶，50~300um

詳細摘要： 1．將單層硫化鉬轉移至襯底（襯底可根據客戶需求選定）2．邊長15um （三角形）片內層數均勻3．襯底上轉移3個（數量可定制）帶電極的單層硫化鉬樣品4．電極間距：...

詳細摘要： 形狀：可任意裁剪尺寸：1*1cm/2*2cm/5*5cm/10*10cm層數：單層晶粒：單晶/多晶，50~300um

詳細摘要： 形狀：可任意裁剪尺寸：1*1cm襯底：紫銅層數：單層晶粒：單晶/多晶，50~300um量大價格面議

詳細摘要： 形狀：可任意裁剪尺寸：1*1cm/5*5cm/10*10cm層數：單層晶粒：單晶/多晶，50~300um

詳細摘要： 尺寸：1*1cm/5*5cm/10*10cm層數：單層晶粒：單晶/多晶，50~300um

詳細摘要： Full Area Coverage Monolayer MoS2 on c-cut Sapphire

詳細摘要： This product contains full area coverage MoS2 monolayers on SiO2/Si substrates.

詳細摘要： This product contains full area coverage ReS2 monolayers on c-cut sapphire subst...

詳細摘要： This product contains full area coverage ReSe2 monolayers on c-cut sapphire subs...

詳細摘要： This product contains full area coverage SnS2 monolayers on c-cut sapphire subst...

詳細摘要： This product contains full area coverage SnSe2 monolayers on c-cut sapphire subs...

詳細摘要： This product contains full area coverage WS2 monolayers on c-cut sapphire substr...

詳細摘要： This product contains full area coverage WSe2 monolayers on c-cut sapphire subst...

詳細摘要： This product contains full area coverage PtSe2 layers （single/multi） on c-cut sa...

詳細摘要： Isolated monolayer thickness MoS2 are grown onto c-cut （0001） sapphire substrate...

詳細摘要： Isolated monolayer thickness MoS2 are grown onto SiO2/Si substrates.

詳細摘要： Isolated monolayer thickness WS2 are grown onto c-cut （0001） sapphire substrates...

詳細摘要： Isolated monolayer thickness WSe2 are grown onto c-cut （0001） sapphire substrate...

詳細摘要： 【巨納】基于二氧化硅基底的三角形單層二硫化鉬（10*10mm）