硒化銦晶體 In2Se3（Indium Selenide）
晶體尺寸：8-10毫米
電學(xué)性能：半導(dǎo)體
晶體結(jié)構(gòu)：六邊形
晶胞參數(shù)：a = b = 0.398 nm, c = 18.89 nm, α = β = 90°, γ = 120°
晶體類(lèi)型：合成
晶體純度：＞99.995%

硒化銦晶體 In2Se3(Indium Selenide)
晶體尺寸：8-10毫米
電學(xué)性能：半導(dǎo)體
晶體結(jié)構(gòu)：六邊形
晶胞參數(shù)：a = b = 0.398 nm, c = 18.89 nm, α = β = 90°, γ = 120°
晶體類(lèi)型：合成
晶體純度：＞99.995%

 

X-ray diffraction on a 2H-In2Se3 (Indium Selenide) single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 8 XRD peaks correspond, from left to right, to (00l) with l = 4, 6, 8, 10, 12, 14, 16, 18

 

Powder X-ray diffraction (XRD) of a single crystal In2Se3. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.

 

Stoichiometric analysis of a single crystal In2Se3 by Energy-dispersive X-ray spectroscopy (EDX).