二硫化錸晶體 ReS2 （Rhenium Disulfide）
晶體結(jié)構(gòu)：三斜晶晶體尺寸：~8毫米
電學性能：N型半導體
晶體結(jié)構(gòu)：三斜晶系
晶胞參數(shù)：a = 0.634, b = 0.640 nm, c = 0.645 nm, α = 106.74°, β = 119.03°, γ = 89.97°
晶體類型：合成
晶體純度：＞99.995%

二硫化錸晶體 ReS2 (Rhenium Disulfide)
晶體結(jié)構(gòu)：三斜晶晶體尺寸：~8毫米
電學性能：N型半導體
晶體結(jié)構(gòu)：三斜晶系
晶胞參數(shù)：a = 0.634, b = 0.640 nm, c = 0.645 nm, α = 106.74°, β = 119.03°, γ = 89.97°
晶體類型：合成
晶體純度：＞99.995%

X-ray diffraction on a ReS2 single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 5 XRD peaks correspond, from left to right, to (00l) with l = 2, 4, 6, 8

 

Powder X-ray diffraction (XRD) of a single crystal ReS2. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.

 

Stoichiometric analysis of a single crystal ReS2 by Energy-dispersive X-ray spectroscopy (EDX).

 

Raman spectrum of a single crystal ReS2. Measurement was performed with a 785 nm Raman system at room temperature.