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泰州巨納新能源有限公司
中級會員 | 第4年

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當前位置:泰州巨納新能源有限公司>>二維材料>>其他二維材料>> GeP 磷化鍺晶體

GeP 磷化鍺晶體

參   考   價: 8678.15

訂  貨  量: ≥1 片

具體成交價以合同協議為準

產品型號

品       牌2D Semiconductors

廠商性質生產商

所  在  地泰州市

更新時間:2024-06-03 21:07:42瀏覽次數:956次

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GeP has highly anisotropic dispersions of band structures, with a layer-dependent indirect band gap from (theoretically predicted) 1.68 eV of monolayer to 0.51 eV of bulk.

GeP has highly anisotropic dispersions of band structures, with a layer-dependent indirect band gap from  (theoretically predicted) 1.68 eV of monolayer to 0.51 eV of bulk. GeP is an anisotropic semiconductor much similar to GaTe monoclinic structure. Our single crystal GeP (Germanium phosphide) crystals come with guaranteed optical, electronic, and structural anisotropy. They are developed at our facilities using state-of-art flux zone techniques. Each growth takes close to three months to provide you perfected crystals that does not contain any halides. Each crystal is highly crystalline, oriented in 0001 direction, and easy to exfoliate. Our R&D staff takes characterization dataset in each sample piece to ensure structural, optical, and electronic consistency. Please also see our GeS, GeSe, GeTe, GeAs, GeP, and Ge-based solutions.

Characteristics of vdW GeP crystals


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